Method of and apparatus for sputtering.

摘要

A thin film forming method and apparatus is provided, wherein a negative voltage is applied alternately to a target (6) and a substrate (8) to perform film formation and reverse sputter alternately. Further, a coil (5) is mounted between the target and the substrate and a high frequency current (3) is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make a fraction of Ar ions to flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to hole stable discharge and reverse sputter at high vacuum region. The pressure of an Ar atmosphere may be lowered to 10<-><3> Torr or less. A film whose peak value of x-ray diffraction strength in (111) plane is 150 Xcps or more is possible. Also, a barrier layer with a layered structure of granular and columnar crystals or a mixed structure thereof and hence with an efficient barrier effect and a large specific resistance is possible.