Semiconductor device for producing electromagnetic radiation.

摘要

A semiconductor device for producing electromagnetic radiation consisting of a radiation-emitting element (2) (LED or laser) and an injection element (4), which can inject hot charge carriers into the active layer (3) of the radiation-emitting element composed of layers of one conductivity type. With the use of active layers having a large band gap, for example GaN, shortwave light can be generated. According to the invention, the radiation-emitting element and the injection element constitute parts of the same epitaxial layer structure, the active layer (3) being connected to the injection element (4) by means of a semiconductor connection layer (5) having a band gap larger than that of the active layer (3) and that of the adjoining layer (6) of the injection element (4).