| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an ion implanting system having installation design changed, regarding each sub-system for the formation thereof. SOLUTION: This ion implanting system for the manufacture of a semiconductor device has an ion generator 32, an ion extractor 33, an ion converter 34, an ion mass spectrograph 36, an ion accelerator 38, and an end station formed for ion implantation and equipped with an ion focusing unit and wafer 30, respectively arranged along an ion beam path. Also, an upstream part and a downstream part on the ion beam path are separated into an upper layer and a lower layer for a semiconductor device manufacturing facility. As a result, when a facility over an area up to the end station after the ion accelerator 38 is installed within the line of the semiconductor manufacturing facility, and a facility upstream thereof is installed under the line, the occupation rate of the ion implanting system per unit facility can be substantially lessened. According to this construction, the competitive power of the semiconductor manufacturing facility can be substantially increased for the high cost and function of the line thereof.</p> |
