| 摘要 |
PROBLEM TO BE SOLVED: To increase light-emitting intensity by providing gallium group-III nitride compound semiconductor, wherein indium is doped in the active layer with an atomic concentration within a specific range, distributed in one direction of the film thickness. SOLUTION: The atomic concentration profile in the depth direction shows on increase of indium concentration in an active layer 104 toward an interface, which is in a junction layer making a junction to the active layer 104 with a high lattice nonconformity. The concentration profile increases indium source supply to a growing reaction system in response to the increase of the thickness of the active layer. The range of indium-doping concentration change is within a range of 8×10<17> cm<-3> or grealy to 4×10<20> cm<-3> or smaller. Thus, in the vicinity of the interface between the active layer, an area wherein a carrier is enclosed or locally exists is formed. Therefore, the light-emitting intensity is increased for the light-emitting elements, and carrier mobility is increased for an electronic function devices. |
