| 摘要 |
PROBLEM TO BE SOLVED: To polish the surface of an SiO2 insulating film or the like at a high speed without flaws by a method in which cerium oxide particle which contains primary particle, whose grain sizes are within a specific range, at a specific ratio is dispersed into medium to obtain slurry, and the surface of the insulating film is polished with abrasive agent which comprises the above slurry. SOLUTION: Cerium oxide particle which contains 90% or above primary particle whose grain diameters range from 5 to 10nm by observation made with a transmission electron microscope is used. By this setup, the surface of an SiO2 insulating film or the like is polished at a high speed without flaws. An SiO2 insulating film layer formed on a semiconductor substrate is polished with cerium oxide abrasive agent, when the rugged surface of the SiO2 insulating film layer is turned to a smooth surface throughout all the surface of the semiconductor substrate. A usual polishing device may be used for the polishing. |
