| 摘要 |
A thin film transistor having double gate structure is disclosed. The thin film transistor comprises: a gate electrode(32a) for high voltage and a gate electrode(32b) for low voltage on a glass substrate(31) being ratio of the length between the high voltage gate electrode(32a) and the low voltage gate electrode(32b) is 1 : 10; a gate insulating layer(33), an amorphous silicon layer(34) and a passivation layer(35) sequentially formed on the double gate electrodes(32a,32b); an n+ amorphous silicon layer(36) connected to the amorphous silicon layer(34) through the passivation layer(35); and a drain electrode(37a) and a source electrode(37b) formed on the n+ amorphous silicon layer(36).
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