发明名称 |
Semiconductor laser and production method thereof |
摘要 |
A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.
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申请公布号 |
US5742629(A) |
申请公布日期 |
1998.04.21 |
申请号 |
US19960684383 |
申请日期 |
1996.07.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NISHIKAWA, TAKASHI;UEMURA, NOBUYUKI;KAMIYAMA, SATOSHI |
分类号 |
H01S5/20;H01S5/223;H01S5/327;H01S5/347;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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