| 摘要 |
Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light-emitting devices at wavelengths of 1.3 mu m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (a) utilizing new superlattice structures (58) having high In concentrations in the active region, (b) utilizing strain compensation (56, 64) to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (c) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure (60), and (d) use of nominal (111) oriented substrates (52) to increase the usable layer thickness for quantum wells with appropriately high In concentrations. |
