Capacitor manufacturing method for integrated circuit

摘要

The method involves forming a metal plug (48) of the length of two metal layers (20,53), and contacting them, is located in a dielectric (36), parallel to the chip plane between the two metal layers of preset shape. Preferably the metal plug is of V, Al or Cu. First a metal layer (20) is deposited over one dielectric (22), patterned, and etched and another dielectric deposited on it, smoothed, patterned, and etched to form an aperture. The latter is filled with metal to form the metal plug. Then the second metal layer is deposited, patterned and etched.