| 摘要 |
<p>A hybrid high-power microwave-frequency integrated circuit comprises a dielectric board (1) which is made of two parts (2, 3) sealed together at their back sides. Crystals (6) are placed in recesses (8) having openings (12) formed at their bottoms (11), wherein said openings (12) are filled with an electro-conductive material (13). The recesses (8) are formed on the front surfaces of both parts (2, 3) of the board (1), a cover (10) being sealed onto said front surfaces of both parts (2, 3) of the board (1).</p> |
