| 发明名称 |
REACTIVE ION ETCHING OF SILICA STRUCTURES |
| 摘要 |
The invention relates to a method for etching of silica-based layers/substrates by reactive ion etching system (10) using an etching gas mixture of CHF3/AR through a photoresist mask. Reactive ion etching is carried out under conditions of simultaneous isotropic deposition of a carbon-based polymer where the polymer deposition rate is controlled by adjusting process control parameters of RF power, sample temperature, O2 and CF4 additions.
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| 申请公布号 |
WO9815504(A1) |
申请公布日期 |
1998.04.16 |
| 申请号 |
WO1997AU00663 |
申请日期 |
1997.10.03 |
| 申请人 |
UNISEARCH LIMITED;BAZYLENKO, MICHAEL;GROSS, MARK |
发明人 |
BAZYLENKO, MICHAEL;GROSS, MARK |
| 分类号 |
G02B6/13;C03C15/00;C23C16/30;G02B6/12;G02B6/136;H01L21/302;H01L21/3065;(IPC1-7):C03C15/00;C03C17/32;C23C14/04;C23C14/12;C23C14/32;C23C14/54 |
主分类号 |
G02B6/13 |
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