发明名称 Halbleitergerät mit Spannungsbelastungskontaktfläche
摘要 An semiconductor device includes an integrated circuit having first and second circuit sections formed on a semiconductor chip (10), at least one voltage stress testing pad (11, 12) formed on the semiconductor chip, for supplying a voltage stress testing voltage or signal to the first circuit section, and a control circuit (15) formed on the semiconductor chip, for controlling and setting the second circuit section into a state corresponding to a voltage stress testing mode by using an input from the voltage stress testing pads. <IMAGE>
申请公布号 DE69129060(D1) 申请公布日期 1998.04.16
申请号 DE1991629060 申请日期 1991.12.23
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 TANAKA, HIROAKI, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP;KOYANAGI, MASARU, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP
分类号 G01R31/26;G01R31/28;G01R31/30;G01R31/3161;G01R31/317;G01R31/3185;G11C11/401;G11C11/4094;G11C29/06;G11C29/50;H01L21/66;(IPC1-7):G01R31/28;G11C29/00 主分类号 G01R31/26
代理机构 代理人
主权项
地址