发明名称 HYBRID HIGH-POWER MICROWAVE-FREQUENCY INTEGRATED CIRCUIT
摘要 A hybrid high-power microwave-frequency integrated circuit comprises a dielectric board (1) which is made of two parts (2, 3) sealed together at their back sides. Crystals (6) are placed in recesses (8) having openings (12) formed at their bottoms (11), wherein said openings (12) are filled with an electro-conductive material (13). The recesses (8) are formed on the front surfaces of both parts (2, 3) of the board (1), a cover (10) being sealed onto said front surfaces of both parts (2, 3) of the board (1).
申请公布号 WO9815978(A1) 申请公布日期 1998.04.16
申请号 WO1996RU00289 申请日期 1996.10.10
申请人 SAMSUNG ELECTRONICS CO., LTD.;IOVDALSKY, VIKTOR ANATOLIEVICH 发明人 IOVDALSKY, VIKTOR ANATOLIEVICH
分类号 H01L23/473;(IPC1-7):H01L27/02 主分类号 H01L23/473
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