| 摘要 |
PURPOSE:To correct the width of the circuit patterns of semiconductor chips obtd. even if the pattern density of the chip regions of the semiconductor chips is below a prescribed value to a value approximate to a design value. CONSTITUTION:A glass mask 10 consists of a glass substrate 11 and the mask patterns 12a, 12b, 12c on this glass substrate 11. The mask patterns 12a, 12b, 12c are disposed within the respective mask regions. The width of the mask patterns 12a, 12b, 12c within the respective regions is set according to the pattern density of the circuit patterns of the chip regions of the corresponding semiconductor chips. The width of the mask patterns 12a, 12b, 12c is determined by correcting the width of the design value of the circuit patterns to a smaller width if the pattern density of the mask patterns 12a, 12b, 12c is below the prescribed value. |
