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发明名称
SEMICONDUCTOR PATTERN FORMATION PROCESS, AND FINE GAP ELECTRODE AND PHOTO CONDUCTOR USING THIS ELECTRODE
摘要
申请公布号
JPH1098208(A)
申请公布日期
1998.04.14
申请号
JP19960271580
申请日期
1996.09.20
申请人
ADVANTEST CORP
发明人
ARAKI TOSHIYUKI
分类号
G03F7/26;G03F7/40;H01L21/027;H01L21/306;H01L21/3213;H01L31/08;(IPC1-7):H01L31/08;H01L21/321
主分类号
G03F7/26
代理机构
代理人
主权项
地址
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