Algainp light-emitting device

摘要

The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al0.7Ga0.3)0.51In0.49P cladding layer (about 1 mu m in thickness), an (Al0.15Ga0.85)0.51In0.49P active layer (about 0.6 mu m in thickness), a p-type (Al0.7Ga0.3)0.51In0.49P cladding layer (about 1 mu m in thickness), and a p-type current-spreading layer composed of either a p-type Al0.7Ga0.3As layer (about 3 mu m in thickness) or a p-type Al0.7Ga0.3As0.97P0.03 layer (about 3 mu m in thickness) and a p-type GaAs0.5P0.5 layer (about 7 mu m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs0.5P0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.