| 摘要 |
PROBLEM TO BE SOLVED: To form a T-shaped gate, having a length of 0.25μm or less by utilizing a general photolithography technique. SOLUTION: On a semiconductor substrate 100, a first film, an insulating film and a second film are formed, and a mask pattern for a gate is formed on the second film. The second film and the insulation film are etched, and then side surfaces of the etched insulating film are etched to adjust the length of the insulating film to a specified length. A photosensitive film is formed on the entire surface of the substrate 100 up to the height, equal to the second film, so that only the surface of the second film is exposed, and then with the photosensitive film as a mask, the second film, the insulation film and the first film are removed to expose a specified part of the substrate 100. The exposed substrate is etched by a specified thickness, to form a T-shape mold, and a gate material film is so formed on the photosensitive film as to be buried in it. The mask pattern for gate is formed on the gate material film, and the gate material film is etched to pattern the T-shaped gate 8'.
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