PECVD APPARATUS AND NITRIDE FILM FORMING METHOD THEREBY

摘要

The present invention increases film uniformity and, by that, enhances reliability of a device. A plasma deposition equipment comprises: a heat block(3) on which a wafer(2) is mounted; a reaction furnace(1) including a gas ventilation pipe(8); a diffuser(4) formed on top of the reaction furnace(1) and connected from ground terminal with a high frequency generator(6) and a first filter(L); and a gas injection pipe(5) connected with the diffuser(4) and injecting reactive gas from exterior of the reaction furnace(1). The present plasma deposition equipment is composed of a second filter(C) and a low frequency generator(7) connected the above heat block(3) and ground.