| 摘要 |
PROBLEM TO BE SOLVED: To produce a thin-film crystal Si solar cell, having good characteristics in a convenient process without slicing an ingot by forming a crystal Si substrate, having specified total surface impurity concn. or more, using an In metal solvent. SOLUTION: An Si layer 107 is formed on a crystal Si substrate, having an impurity concn. of 10ppm or more by the liq. crystal growth method using an In solvent. Using this layer 107 as an active layer thin-film solar cells are formed, such that the liq. crystal growth is made with In contacted to the metal Si substrate surface, thereby forming an Si layer contg. little impurities, suitable for solar cells. A mold is used for directly forming a metal Si substrate, this eliminates the need for troublesome steps reguining much time for slicing a substrate by the casting method. This also removes most of the impurities from the surface layer in advance by the segregation effect, thereby forming a good Si layer. |
