发明名称 |
CONTACT MANUFACTURING OF SEMICONDUCTOR DEVICE |
摘要 |
It provides a profitable contact manufacturing method for high-integrated device and enlarges process margin, by forming multi mask layers on a interlayer isolation film, eliminating more mask layers' areas than the preset areas for contacts of the interlayer isolation film, and, by sequentially forming spacers, arranging the whole contact hole size as a self aligning to form micro contacts beyond the size of the mask process limit.
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申请公布号 |
KR0131728(B1) |
申请公布日期 |
1998.04.14 |
申请号 |
KR19940011003 |
申请日期 |
1994.05.20 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
KIM, KEUN-TAE;JUNG, JIN-KI;JUNG, MOON-SIK |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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