| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the opening rate and to obtain high image quality by forming an active layer, a gate insulating layer and a pixel electrode to constitute a storage capacitor. SOLUTION: A first active layer 31 is formed along a gate line 41 on a substrate in one corner of a rectangle surrounded by the gate line 41 and a data line 38, and a second active layer 31' is formed along a gate line facing the gate line 41 near which the first active layer 31 is formed. A gate electrode 33 is formed between the source region and drain region of the first active layer 31, and the gate electrode 33 is connected to the gate line 41. A first pixel electrode 25 is formed in such a manner that a part of the electrode 35 is in contact with the drain region of the first active layer 31. In this case, a second pixel electrode 35' is formed under the gate line 41 and the second pixel electrode 35' connects the gate electrode 33 and the second active layer 31' where a storage capacitor is formed.</p> |
