| 摘要 |
PROBLEM TO BE SOLVED: To prevent copper from being diffused in a base body and to enable obtaining high-barrier property and low-resistance wiring layers suitable for a fine process by a method, wherein the wiring layers containing copper as a main component are formed on the base body via a barrier layer, which consists of a carbide tantalate layer, in an amorphous state. SOLUTION: An impurity-diffused region 2 is prepared in the surface layer of a silicon substrate 1, and an insulating layer 3 consisting of an SiO2 layer, a contact hole 4 formed in such a way as to make the region 2 expose and a base body consisting of wiring grooves 5 and 6 are prepared on the substrate 1. Then, a barrier layer 7, consisting of a TaNx Cy layer is formed on the entire surface of the base body by a sputtering method, in such a way that the thickness of the bottom of the hole 4 is formed with a thickness of 25nm. Then, after a metal compound film 8 containing copper as its main component is formed on the layer 7, this film 8 is polished by a damascene method using a CMP or the like to form wiring layers 9. Thereby, even if the layers 9 are heat-treated at a high temperature of 600 deg.C or higher, copper atoms can be prevented from diffusing into the substrate 1. |
