| 摘要 |
PURPOSE: To simplify the manufacturing process of a semiconductor device and, particularly in the manufacturing process of an FET, reduce the distance between a gate electrode and a source region and the distance between the gate electrode and a drain region. CONSTITUTION: A mask 2 which has apertures corresponding to a source region forming part, a drain region forming part and an alignment mark forming part is formed on a semiconductor substrate 1. After the semiconductor substrate 1 is etched by using the mask 2 and the alignment mark 3 is formed, impurities are introduced into the semiconductor substrate 1 by using the mask 2 to form a source region 5 and a drain region 6. After that, the other patterns such as a gate electrode 11 are formed by lithography and the mask alignment for lithography is performed by using the alignment mark 3 as a reference mark. |
