Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors

摘要

A thermoelectric semiconductor device is disclosed having a structure wherein a predetermined number of p-type and n-type semiconductor elements (21,22) is arranged in a two-dimensional configuration and is alternatingly electrically connected in series. The device utilizes a heat generation and/or an adsorption phenomenon caused by supplying a DC current to said semiconductor elements or an electromotive force caused by a temperature difference given at each junction between said semiconductor elements. The device is characterized in that the semiconductor elements are arranged with a space between them, each space being either filled with an adiabatic insulation material (25) and being deaerated to a vacuum. Each of said semiconductor elements may be made of a porous material. The application also discloses an electronic refrigeration panel comprising said therporous material semiconductor device, wherein the semiconductor elements are made of a thermoelectric semiconductive material supported by support particles.