发明名称 Semiconductor element having a bump electrode
摘要 A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving up a bonding capillary, moving the bonding capillary sideway and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire, the Au wire being prevented from coming in contact with the periphery of the ball bond portion except for the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed. <IMAGE>
申请公布号 EP0834919(A2) 申请公布日期 1998.04.08
申请号 EP19970116886 申请日期 1997.09.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIGASHI, KAZUSHI;TSUKAHARA, NORIHITO;YONEZAWA, TAKAHIRO;YAGI, YOSHIHIKO;KITAYAMA, YOSHIFUMI;OTANI, HIROYUKI
分类号 H01L21/60;H01L23/485 主分类号 H01L21/60
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