发明名称 |
Method of growing a single crystal thin film with a uniform thickness, in the vapor phase |
摘要 |
In the preparation stage before the manufacturing of the single crystal thin film 13, growth conditions are determined by conducting a vapor phase growth without rotating the rotatable holder 14 on its axis and making adjustments such that the growth rate of the single crystal thin film 13 is laterally asymmetric with respect to the virtual center axis on the holder 14 parallel to the feeding direction of the source material gas 19, and then said single crystal thin film is manufactured based on said growth conditions. <IMAGE> |
申请公布号 |
EP0731492(A3) |
申请公布日期 |
1998.04.08 |
申请号 |
EP19960103695 |
申请日期 |
1996.03.08 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
NAGOYA, TAKATOSHI;KASHINO, HISASHI;HABUKA, HITOSHI |
分类号 |
H01L21/205;C30B25/14 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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