发明名称 LIQUID PHASE EPITAXIAL GROWTH APPARATUS
摘要 PURPOSE:To prevent contamination of substrate caused by tweezers by providing an outer tube, a vessel internally in contact therewith and a holding means for holding said vessel to the outer tube in the immersing type hermetically closed apparatus and also a means for holding the substrate and an opening/ closing cover to said vessel. CONSTITUTION:A CdTe substrate 14 is held by the quartz protrusion 15 at the upper part of the rectangular parallelopiped quartz vessel 11 which is internally in contact with the quartz sealed tube 12. The side of vessel 11 is the opening/ closing cover 16 and it can slide along the groove of vessel. The HgCdTe crystal 17 is housed in the vessel and the cover 16 is closed, the vessel 11 is supported by a quartz bar 13 in the quartz tube. The tube 12 is exhausted and sealed 12. After the material 17 is fused, the sealed tube is rotated for 180 deg. and the tube is placed in contact with the substrate. A temperature is lowered and the crystal of Hg1-xCdxTe is formed on the substrate. After the specified time, the sealed tube is rotated for 180 deg. and thereby solution and substrate are separated. With this structure, the substrate can be easily placed on the supporting member and the epitaxial growth process can be realized easily.
申请公布号 JPS5976432(A) 申请公布日期 1984.05.01
申请号 JP19820187745 申请日期 1982.10.25
申请人 FUJITSU KK 发明人 MARUYAMA KENJI;ITOU MICHIHARU;UEDA TOMOSHI;YOSHIKAWA MITSUO
分类号 H01L21/208;H01L21/368 主分类号 H01L21/208
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