Methods and apparatus for programming content-addressable memories using floating-gate memory cells

摘要

A method for the programming of floating-gate memory cells of a content-addressable memory in an integrated circuit comprises the application, through a programming path, of a programming high voltage to the drain of selected cells. The method comprises a verification stage in which the selection of these cells is maintained to obtain direct read access to these cells by applying a read voltage to them through said programming path and to carry out a measurement of current or of voltage on said programming path.