MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A fabrication method of semiconductor devices is provided to easily form a fine pattern less than resolvability of stepper. The method comprises the steps of: sequentially forming a first PR(28), an SOG(spin on glass) film(29) and a second PR(30) on a substrate(26) having a polysilicon layer(27); forming a second PR pattern by exposing the second PR(30) using a first exposing mask(20) having light shielding patterns(24) and removing the exposed portion; forming SOG pattern by RIE(reactive ion etching); forming a third PR pattern by exposing a third PR(31) using a second exposing mask(21) having light shielding patterns(25); and forming fine polysilicon patterns by etching the polysilicon layer(27) using the third PR pattern as a mask.