Sputtering device for semiconductor component manufacture

摘要

The sputtering device comprises a negative electrode assembly (102) with metal target (10), facing a positive electrode assembly (106), onto which a semiconductor substrate (104) can be deposited. A collimator (108) is located between assemblies near to the semiconductor substrate of a net-like heating material, generating Joule heat on current application. Pref. the positive electrode assembly contains a heat susceptor. In the mfg. process a switching FET is formed with a gate electrode and a source/drain region in an active section of the semiconductor substrate, on which an insulating layer is deposited with etched contact aperture over the source/drain region.