| 摘要 |
In a field effect-controllable vertical semiconductor device having a semiconductor body (1) with a second conductivity body region (4) between first conductivity type source and drain regions (3, 2) and a gate electrode insulated from the entire body (1) by a gate oxide (7), the gate and drain connections (G, D) are located on the wafer front face (9) and the source connection (S) is located on the wafer back face (10). Also claimed is production of the above device by (a) implanting boron or aluminium ions into the semiconductor body (1), which also forms the source zone (3), to produce the body region and then heat treating; (b) epitaxially growing an n-doped drain region (2) on the body region (4); (c) ion implanting to form contact regions (2') in the near-surface drain regions (2); (d) applying and structuring a thick oxide to form a trench etching mask; (e) anisotropically etching trenches (6) from the front face (9) down into the source region (3); (f) growing thermal Si O2 as gate oxide on the trench walls; (g) filling the trenches (6) with n<+>-doped polysilicon and etching away excess polysilicon; (h) depositing field oxide (8), preferably BPSG, on the wafer front face and etching away excess field oxide (8) at the contact regions (2') of the drain zones (2); (i) contacting the contact regions with aluminium; and (j) metallising the entire wafer back face (10) with aluminium. |
