Method for fabricating a cylindrical capacitor for a semiconductor device

摘要

The present invention provides a method of manufacturing a cylindrical capacitor for a DRAM. A resist layer is first used to pattern a first conductive layer and an oxidation barrier layer into a cylindrical bottom electrode. In a critical step, the resist layer is laterally etched removing a lateral portion of the resist layer thereby exposing an outer cylindrical section of the barrier layer. Using the now narrower (laterally plasma etched) resist layer as a mask, the exposed portions of the oxidation barrier layer are etched away. A masking layer is formed over the sidewalls and the exposed portions of the bottom electrode by an oxidation process. The oxidation barrier layer then is removed. The bottom electrode is anisotropically etched using the masking layer as a mask forming a cylindrical storage electrode. A dielectric layer and top plate electrode are formed over the storage electrode to form the capacitor.