| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a stable SRAM capable of operating at a low operating voltage or structured by a finer design rule. SOLUTION: The SRAM cell having enhanced stability is provided with a bus transistor having a gate electrode molded by oxidation with the lower edge part of the gate electrode in the state distant from the surface of a substrate 30. Since the gate electrode 38 of a load transistor and pull down transistor 14 is masked in the oxidation step, the gate electrode 38 is rectangular as in a conventional one. In such a constitution, the current running in the bus transistor 18 is made less than the current running in the pull down transistor 14 by correcting the shape of the gate electrode 44 of the bus transistor 18. |
