| 摘要 |
PROBLEM TO BE SOLVED: To make feasible the stabilization of high resistance of a high resistance element and the reduction of power consumption by a method wherein N type impurities are introduced into a semiconductor layer comprising the high resistance element so as to arrange a gate electrode of a MOS transistor on the position immediately below the high resistance element for utilizing the potential impressed on the gate electrode. SOLUTION: In the semiconductor memory, a MOS transistor is formed on a semiconductor substrate 1 so as to form a semiconductor layer 9a to be a high resistance element is formed on the MOS transistor through the intermediary of a insulating film 3 at this time, the semiconductor layer 9a is implanted with phosphorus to be patterned in a specific shape. Through these procedures, the effect of mixture, diffusion, etc., of the impurities from the insulating film 3 and a conductive layer arranged on the periphery can be averted thereby enabling the high resistance of the high resistance element to be stabilized. Besides, a gate electrode 4 of the MOS transistor is arranged on the position immediately below the high resistance element so as to utilize the potential impressed on the gate electrode 4 for reducing the high resistance of the high resistance element to secure the data holding current thereby making feasible of the reduction in power consumption. |
