| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field-effect transistor which can reduce ON resistance while securing a breakdown voltage. SOLUTION: A projected drain semiconductor region 200 is formed on a surface of a semiconductor substrate 10 between a plurality of base regions 50, and a part of the drain semiconductor region 200 is made of a wide band gap semiconductor (e.g. silicon carbide) larger in band gap than the semiconductor substrate 10. The wide band gap semiconductor is connected to a drain electrode 130, and the part of the drain semiconductor region 200 is held between gate electrodes 110.</p> |
