发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacturing method thereof which holds the heat radiating property of a plated heat sink(PHS) and handling property and reduces a internal stress due to the plating and a repetitive stress due to the heat cycle in the manufacturing process for reducing the chip crack and peel of the plating. SOLUTION: On the front side of a thin semiconductor substrate 2 a functional element having a heat-generative element part 1a generating heat during operation is formed, while a PHS 40 is formed on the back side thereof. The PHS 40 is selectively formed on regions, including the marginal regions on the back side surface of the substrate, main heat dispersing regions composed of regions corresponding to the element part 10 on the back side surface of the substrate and regions near them, and coupling support regions for coupling the marginal regions with the main heat dispersing regions on the back side surface of the substrate.
申请公布号 JPH1079456(A) 申请公布日期 1998.03.24
申请号 JP19960232242 申请日期 1996.09.02
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIKAWA KIYOSHI;NAKATANI MITSUNORI;OZAKI KATSUYA
分类号 H01L23/34;H01L21/338;H01L23/367;H01L23/373;H01L29/812;(IPC1-7):H01L23/34 主分类号 H01L23/34
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