| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve electro migration resistance and stress migration resistance and to enable high efficient electron emission by laminating an insulating film and an upper electrode on a lower electrode comprising a specified high melting material film. SOLUTION: A Ta film 21 comprising a high melting material able to be anodized and having a melting point higher than that of Al and a Al film 22 are continuously formed on an insulating base plate 10 without breaking vacuum, etched and formed into a shape of a lower electrode. Next, the upper surface of the Al film 22 and the side surfaces of the Al film 22 and the Ta film 21 are anodized until the Al film 22 on the upper surface 22 is completely anodized, and an insulating layer formed of a A12 O3 film 23 is formed on the lower electrode formed of the Ta film 21. Next, an upper electrode 13 comprising three layer films of Ir, Pt and Au is laminated on this insulating layer.</p> |
