发明名称 CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a chemical amplification type resist excellent in transparency and dry etching resistance by using a base resin transmitting various radiation rays in a combination with an acid generating agent having high transparency. SOLUTION: In this resist compsn., an acid sensitive compd. is a polymer or copolymer having alicyclic hydrocarbon groups in its molecule and an acid generating agent is a compd. represented by the formula, wherein each of R1 and R2 is independent, and identical or different, and is optionally substd. alkyl or nonsubstd. alkyl or completes a cyclic structure in combination with N, X is halogen or an anion of F, BF4 , BF6 , AsF6 , SbF6 , CF3 SO3 , ClO4 or org. sulfonic acid. The top of a substrate to be processed is coated with this resist compsn., the resultant resist film on the substrate is selectively exposed with radiation capable of inducing the generation of an acid from the acid generating agent and a formed latent image is developed.
申请公布号 JPH1078658(A) 申请公布日期 1998.03.24
申请号 JP19960235247 申请日期 1996.09.05
申请人 FUJITSU LTD 发明人 TAKAHASHI MAKOTO;TAKECHI SATOSHI
分类号 G03F7/004;G03F7/039;G03F7/38;G03F7/40;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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