发明名称 LED display device
摘要 A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.
申请公布号 US5732098(A) 申请公布日期 1998.03.24
申请号 US19960611460 申请日期 1996.04.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NISITANI, KATSUHIKO;UNNO, KAZUMI;ISHIKAWA, MASAYUKI;SAEKI, RYO;NAKAMURA, TAKAFUMI;IWAMOTO, MASANOBU
分类号 H01L33/10;H01L33/12;H01L33/14;H01L33/28;H01L33/30;(IPC1-7):H01S3/19 主分类号 H01L33/10
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