SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride film (4) which is patterned into the reverse pattern of a foundation pattern is formed on a silicon oxide film (3) which is so formed as to cover the steps of a semiconductor substrate (1) and polished by CMP. At this time, the speed of polishing the silicon nitride film (4) by CMP is slower than the speed of polishing the silicon oxide film (3) by the CMP and the thickness of the silicon nitride film (4) is so determined as to be a value of the depth of the step x (the polishing speed of the silicon nitride film (4) / the polishing speed of the silicon oxide film).