发明名称
摘要 PURPOSE:To multiply a memory capacity two or more times with respect to an identical mounting area by a method wherein two or more film-carrier semiconductor modules are piled up and are connected electrically and a spacer is laid between these film carriers. CONSTITUTION:A bump 4a and a film carrier tape 6a are connected electrically by using an inner lead part 10a. The surface and the side of a semiconductor chip 2a are coated with a protective coating resin 14a. A surface pattern 22a and a rear pattern 24a are formed on a spacer 20a and are connected electrically by means of a through hole 26a. The surface pattern 22a and an outer lead 12a are connected electrically by means of a first connection layer 16a; a semiconductor module 28a is formed. A semiconductor module 29a of the same constitution is piled up; these are connected electrically by means of a second connection layer 18b. In the same manner, semiconductor modules 28c, 28d are piled up one upon another.
申请公布号 JP2728432(B2) 申请公布日期 1998.03.18
申请号 JP19880139304 申请日期 1988.06.08
申请人 HITACHI SEISAKUSHO KK 发明人 SAKAGUCHI MASARU;NISHI KUNIHIKO;KANEDA AIZO;SERIZAWA KOJI;PPONDA MICHIHARU;YOSHIDA TOORU;TANIMOTO MICHIO
分类号 H01L25/18;H01L21/60;H01L25/065;H01L25/07;H01L25/10;H01L25/11;(IPC1-7):H01L25/065 主分类号 H01L25/18
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