| 摘要 |
First and second layers are alternately laminated on the semiconductor substrate, providing a multilayer structure in which the resultant residual stress in the layered structure is significantly decreased. One embodiment of the invention is applied to a vertical cavity surface emitting laser having a dielectric multilayer mirror comprised of pairs of a first layer (SiO2 layer) and a second layer (TiO2 layer). Each layer has a prescribed thickness and is formed by deposition on a semiconductor (GaAs) substrate. When the layers are deposited on the semiconductor substrate, the first layer is preferably formed to exhibit a residual compressive stress, while the second layer is preferably formed to exhibit a residual tensile stress having a magnitude that is equal to or almost equal to the residual compressive stress of the first layer.
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