| 摘要 |
<p>A semiconductor device having a source strapping line is provided to prevent characteristic variation of a cell transistor adjacent to a source strapping active region by arranging a source contact and a bit line contact on the same line. Plural source regions and drain regions(60s,60d) are formed on a semiconductor substrate(50). Plural word lines(58) are arranged between the source region and the drain region. A conductive line is formed on the semiconductor substrate to be parallel with respect to the word lines. Plural bit lines are connected to the drain regions to cross the upper portions of the word lines. Source strapping lines are formed on an upper portion of the conductive line to cross the upper portions of the word lines. The source strapping lines are connected to the source regions and the conductive line. A ground line is connected to the conductive line.</p> |
