发明名称 Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen
摘要 This invention concerns a process for producing an integrated semiconductor storage assembly, particularly with ferroelectric materials as storage dielectrics. To that effect, a conductive connection between a first electrode of a storage capacitor and a selector transistor is only produced after depositing of the storage dielectric. This invention also concerns storage assemblies produced according to said production process.
申请公布号 DE19640273(C1) 申请公布日期 1998.03.12
申请号 DE19961040273 申请日期 1996.09.30
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 SCHINDLER, GUENTHER, DR., 80802 MUENCHEN, DE;HARTNER, WALTER, DIPL.-PHYS. (UNIV.), 89441 MEDLINGEN, DE;HINTERMAIER, FRANK, DR., 81373 MUENCHEN, DE;MAZURE, CARLOS, DR., 85614 KIRCHSEEON, DE
分类号 H01L21/768;H01L21/02;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/10;H01L27/108;H01L27/115;(IPC1-7):H01L21/823;H01L27/105 主分类号 H01L21/768
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