| 摘要 |
A process for removing photoresist from semiconductor wafers is disclosed wherein pressure in excess of one atmosphere is applied to ozone, followed by a mixing of the ozone with deionized water via a series of nozzles, and finally where the semiconductor wafers having at least one layer of photoresist are exposed to the mixture of ozone and deionized water. The temperature during the process is maintained at above ambient temperatures of 20-21° C. or 70° F. An apparatus for the removal of photoresist from semiconductor wafers wherein the apparatus is comprised of a tank capable of holding semiconductor wafers, a series of nozzles, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank |
