METHOD OF FABRICATING A MEMORY DEVICE

摘要

The present invention provides a method for manufacturing a memory device comprising: defining a cell section and an operating section on a substrate; forming operating transistors in the operating section; forming a first bit line in the cell section, a first unit memory cell on an upper side of the first bit line, a word line on an upper side of the memory cells, a second unit memory cell on an upper side of the word line; forming a flattening film filling in a gap between the second unit memory cells, which has second bit line grooves on the first bit lines, a bit line contact via on the second bit line grooves, floating electrode grooves on the upper of the end of the word line, and a first floating contact via and a second floating contact via in the floating electrode grooves; and forming second bit lines in the second bit line grooves, bit line contact electrodes in the bit line contact vias, floating electrodes in the floating electrode grooves, first floating contact electrodes in the first floating contact vias, and second floating contact electrodes in the second floating contact vias simultaneously.