发明名称 SENSING AMPLIFIER
摘要 <p>PROBLEM TO BE SOLVED: To provide a sensing amplifier in which a difference between a reference voltage and a sensing voltage is obtained largely and a sensing speed and sensitivity are improved. SOLUTION: In a sensing amplifier amplifying a difference between sensing voltage set to a node N20 from a load transistor 204 and a cell current source 207 and reference voltage set to a node N2 from a load transistor 104 and a reference current source 107, both of the load transistors 104, 204 are controlled with the same voltage, for example, a voltage of a node N2. For example, in off-cell reading, since a current by a cell current source 207 is not made to flow, a current is not discharged from the node N20, on the other hand, since the load transistor 204 corresponds to a voltage of the node N2, a current is supplied to the node N20 without turning off, sensing voltage of the node N20 is largely boosted, a difference between a sensing voltage of the node N20 and a reference voltage of the node N2 is widened larger than conventional difference.</p>
申请公布号 JPH1069787(A) 申请公布日期 1998.03.10
申请号 JP19970106950 申请日期 1997.04.24
申请人 SAMSUNG ELECTRON CO LTD 发明人 JO YOSEKI;NIN KOSHU
分类号 G11C11/419;G11C7/06;G11C11/407;H03F3/45;(IPC1-7):G11C11/419 主分类号 G11C11/419
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