| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a production method of a halftone phase shift mask comprising a metal silicide such as molybdenum silicide by which the CD (line width of a mask) and phase difference can be independently controlled and a mask of high accuracy which satisfies requirements for both of the CD and phase difference can be obtd. SOLUTION: After a MoSiN film pattern 32a is formed by dry etching by using a resist pattern 33a as a mask, the phase difference and DC are measured. When the phase difference is satisfactory but the CD is required to be more accurate for the designed value, the etching conditions are changed to control only the CD while the phase difference is kept, and then a dry etching process is added.</p> |
