| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten the number of stags by making it possible to continuously forming an org. protective layer by one time of etching of this layer, removing of a photoresist and oxygen ashing within a dry etching chamber. SOLUTION: The org. protective layer 110 is deposited to cover a TFT array and the photoresist is applied on the org. protective layer 110 and is developed and dry etched, by which contact holes are formed. The photoresist is removed by the oxygen ashing and the surface of the org. protective layer 110 is converted to a silicon oxide (SiO2 ) 115 layer by the oxygen ashing. An ITO layer 112 is deposited on such org. protective layer 110. Pixel electrodes are formed by applying the photoresist, developing the photoresist, etching the ITO layer and removing the photoresist by the oxygen ashing.</p> |
