| 摘要 |
PROBLEM TO BE SOLVED: To provide an equipment and a method for excellently performing a reflow process for reducing the imperfect operation of an FET which is to be caused by imperfect contact. SOLUTION: This equipment of forming a semiconductor is provided with at least a first reaction chamber 105 and a second reaction chamber 108 which can independently control atmosphere, have air-tightness, and are linked with each other. In the first reaction chamber 105, a film of aluminum or a film whose main component is aluminum is formed by a sputtering method. In the second reaction chamber 108, heat treatment is performed, and fluidity is imparted to at least a part of the film of aluminum or the film whose main component is aluminum. |
